Vishay SIS5712DN Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK
- N° de stock RS:
- 653-113
- Référence fabricant:
- SIS5712DN-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 1 unité)*
1,36 €
(TVA exclue)
1,65 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 6 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Ruban(s) | le ruban |
|---|---|
| 1 - 24 | 1,36 € |
| 25 - 99 | 1,32 € |
| 100 - 499 | 1,30 € |
| 500 - 999 | 1,10 € |
| 1000 + | 1,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-113
- Référence fabricant:
- SIS5712DN-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK | |
| Series | SIS5712DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0555Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 39.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.30mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Height | 1.04mm | |
| Length | 3.30mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK | ||
Series SIS5712DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0555Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 39.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 3.30mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Height 1.04mm | ||
Length 3.30mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay SIS5712DN Series Single MOSFETs, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIS5712DN-T1-GE3
This single MOSFET device is a surface-mount N-channel transistor intended for high-voltage switching and power-management roles in industrial electronics. It operates over a wide thermal range suitable for demanding environments and is provided in a compact PowerPAK package for space-conscious board layouts. The device is lead-free and offers enhancement-mode switching performance for conventional gate-driven applications.
Features and Benefits:
• 150V drain tolerance enables high-voltage switching
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom
Applications
• Suitable for industrial motor-drive stages
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits
What thermal range can it withstand during operation?
It is rated to function from -55°C up to 150°C, accommodating extreme ambient and junction temperatures.
How does the gate specification affect driver selection?
The 20V maximum gate-source rating defines the maximum permissible gate-drive amplitude and informs driver voltage margins to avoid overstress.
What electrical characteristic governs switching losses during transitions?
The typical gate charge of 5.8nC influences the required drive energy and switching speed, affecting switching-loss calculations.
How does the device package assist PCB assembly?
The PowerPAK surface-mount format supports automated placement and soldering while enabling efficient thermal coupling to the PCB copper.
Liens connexes
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