Vishay SIR4406DP Type N-Channel Single MOSFETs, 78 A, 40 V Enhancement, 8-Pin PowerPAK SIR4406DP-T1-GE3
- N° de stock RS:
- 653-107
- Référence fabricant:
- SIR4406DP-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 bobine de 3000 unités)*
1 677,00 €
(TVA exclue)
2 028,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 0,559 € | 1 677,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 653-107
- Référence fabricant:
- SIR4406DP-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 78A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SIR4406DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00475Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 41.6W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 10.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.04mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 78A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SIR4406DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00475Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 41.6W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 10.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.04mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 40 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low gate charge (Qg), optimized switching characteristics, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
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