Vishay EF Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK

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8,15 €

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9,86 €

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*Prix donné à titre indicatif

N° de stock RS:
653-078
Référence fabricant:
SIHR100N60EF-T1GE3
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

EF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.108Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

347W

Maximum Operating Temperature

150°C

Length

10.42mm

Width

8mm

Standards/Approvals

RoHS

Automotive Standard

No

Pays d'origine :
CN

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 38A Maximum Continuous Drain Current - SIHR100N60EF-T1GE3


This power MOSFET is a high-voltage N-channel switch designed for surface-mount power conversion and switching applications. It operates within a broad temperature range suitable for demanding industrial environments and is intended for use where robust drain-source voltage handling and elevated power dissipation are required. The component is supplied in a low-profile PowerPAK package to support Compact board layouts and effective thermal management.

Features and Benefits:


• 600V maximum Vds delivers high-voltage switching capability • 38A continuous drain current enables substantial load handling • 0.108Ω Rds(on) minimises conduction losses at rated current • 347W maximum Pd supports high-power dissipation needs • 35nC typical gate charge aids efficient switching performance

Applications


• Suitable for high-voltage switch-mode power supplies • Ideal for industrial motor drive inverter stages • Used for power factor correction circuits in AC systems • Can be used for DC-DC converters in automation equipment • Suitable for high-voltage switching in power distribution units

What limits should I observe for gate-drive voltage?


The gate-source voltage must not exceed 30V to prevent gate dielectric stress.

How does thermal endurance relate to operating limits?


The device is rated to operate up to 150°C junction temperature, allowing continued operation under elevated thermal conditions with appropriate PCB heat-sinking.

What is the acceptable ambient temperature range for deployment?


It supports operation down to -55°C, making it suitable for low-temperature industrial environments.

How many pins does the package provide for board connection?


The component uses an 8-pin configuration in the PowerPAK surface-mount package.

Is this intended for automotive qualification?


It is not specified as meeting automotive standard approvals.

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