Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3145N8-G
- N° de stock RS:
- 598-898
- Référence fabricant:
- DN3145N8-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 2000 unités)*
1 748,00 €
(TVA exclue)
2 116,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 09 mars 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 0,874 € | 1 748,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-898
- Référence fabricant:
- DN3145N8-G
- Fabricant:
- Microchip
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 (D-PAK-3) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion Mode | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.29mm | |
| Width | 3 mm | |
| Length | 4.4mm | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 (D-PAK-3) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion Mode | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 2.29mm | ||
Width 3 mm | ||
Length 4.4mm | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Automotive Standard No | ||
The Microchip Depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
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