Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G
- N° de stock RS:
- 598-332
- Référence fabricant:
- TD9944TG-G
- Fabricant:
- Microchip
Sous-total (1 bobine de 3300 unités)*
7 797,90 €
(TVA exclue)
9 434,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3300 + | 2,363 € | 7 797,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 598-332
- Référence fabricant:
- TD9944TG-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 240V | |
| Series | TD9944 | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Transistor Configuration | Dual N Channel | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.9mm | |
| Width | 3.9 mm | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 240V | ||
Series TD9944 | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Transistor Configuration Dual N Channel | ||
Maximum Operating Temperature 150°C | ||
Length 4.9mm | ||
Width 3.9 mm | ||
Height 1.75mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip Dual N-Channel enhancement-mode vertical MOSFETs use Supertex’s well-proven silicon-gate manufacturing process. This combination offers power handling capabilities similar to those of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even in demanding environments.
High input impedance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
- DiodesZetex Dual DMP3164 2 Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOT
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON
- DiodesZetex Dual DMP3164 2 Type P-Channel MOSFET 30 V Enhancement, 6-Pin TSOT DMP3164LVT-7
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays 30 V Enhancement, 8-Pin SO-8 IRF7831TRPBF
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP BSL308CH6327XTSA1