Infineon IPT0 N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1
- N° de stock RS:
- 351-908
- Référence fabricant:
- IPT023N10NM5LF2ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
15,42 €
(TVA exclue)
18,66 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 988 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 7,71 € | 15,42 € |
| 20 - 198 | 6,95 € | 13,90 € |
| 200 - 998 | 6,41 € | 12,82 € |
| 1000 - 1998 | 5,935 € | 11,87 € |
| 2000 + | 5,32 € | 10,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-908
- Référence fabricant:
- IPT023N10NM5LF2ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 243A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPT0 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 144nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.58mm | |
| Height | 2.4mm | |
| Width | 10.1mm | |
| Standards/Approvals | RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 243A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPT0 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 144nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Length 10.58mm | ||
Height 2.4mm | ||
Width 10.1mm | ||
Standards/Approvals RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | ||
Automotive Standard No | ||
- Pays d'origine :
- AT
The Infineon OptiMOS 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).
Wide safe operating area (SOA)
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
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