Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1

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N° de stock RS:
284-688
Référence fabricant:
IPT017N12NM6ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

331A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

395W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 6 power transistor sets a new Benchmark for performance in the semiconductor industry. Engineered for high efficiency and exceptional thermal management, this product excels in demanding applications. With a robust design that supports 120V, it is tailored for high frequency switching, offering reliability and speed without compromising on energy efficiency. The N channel MOSFET integrates very low on resistance and minimal gate charge, making it an Ideal solution for power conversion and control in industrial settings. Its Advanced engineering ensures compliance with RoHS and other environmental standards, making it both a sustainable and performance driven choice for modern electronics.

Optimised for high frequency performance

Excellent thermal efficiency for reliability

Low on resistance reduces energy losses

Fast gate charge for swift operations

Qualified for industrial performance

Environmentally compliant for sustainability

Handles high avalanche energy safely

Wide operating temperature range

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