Infineon IGT65 Type N-Channel MOSFET, 31 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1
- N° de stock RS:
- 351-966
- Référence fabricant:
- IGT65R055D2ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
7,54 €
(TVA exclue)
9,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 1 995 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,54 € |
| 10 - 99 | 6,78 € |
| 100 - 499 | 6,24 € |
| 500 - 999 | 5,80 € |
| 1000 + | 5,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-966
- Référence fabricant:
- IGT65R055D2ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGT65 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.066Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Gate Source Voltage Vgs | -10V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 106W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGT65 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.066Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Gate Source Voltage Vgs -10V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 106W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.
Enhancement mode transistor
Ultra fast switching
No reverse recovery charge
Capable of reverse conduction
Low gate and output charge
Superior commutation ruggedness
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