Infineon IPT0 N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1
- N° de stock RS:
- 351-906
- Référence fabricant:
- IPT017N10NM5LF2ATMA1
- Fabricant:
- Infineon
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 351-906
- Référence fabricant:
- IPT017N10NM5LF2ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 321A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 165nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.58mm | |
| Width | 10.1mm | |
| Height | 1.3mm | |
| Standards/Approvals | Halogen-Free (IEC61249-2-21), RoHS, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 321A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-HSOF-8 | ||
Series IPT0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 165nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.58mm | ||
Width 10.1mm | ||
Height 1.3mm | ||
Standards/Approvals Halogen-Free (IEC61249-2-21), RoHS, JEDEC | ||
Automotive Standard No | ||
Infineon IPT0 Series MOSFET, 100V Maximum Drain Source Voltage, 321A Maximum Continuous Drain Current - IPT017N10NM5LF2ATMA1
This MOSFET is a high-power N-channel transistor designed for demanding switching applications where high current capability and thermal endurance are required. It operates across a wide temperature range and is supplied in an 8-pin surface-mount package suitable for compact power modules. The device adheres to halogen-free and RoHS standards and is intended for systems needing robust conduction and switching performance without automotive certification.
Features and Benefits:
• 100V drain tolerance enables high-voltage switching
• 321A continuous drain current supports heavy-load operation
• 1.7mΩ low Rds(on) reduces conduction losses
• 375W power dissipation allows high thermal throughput
• 165nC gate charge supports controlled switching transitions
• 1.2V forward voltage minimises diode conduction losses
• 321A continuous drain current supports heavy-load operation
• 1.7mΩ low Rds(on) reduces conduction losses
• 375W power dissipation allows high thermal throughput
• 165nC gate charge supports controlled switching transitions
• 1.2V forward voltage minimises diode conduction losses
Applications
• Suitable for high-power DC-DC converters and inverters
• Ideal for industrial motor drive switching stages
• Used with power modules requiring surface-mounted MOSFETs
• Can be used for server and telecoms power distribution
• Appropriate for energy conversion in renewable power systems
• Ideal for industrial motor drive switching stages
• Used with power modules requiring surface-mounted MOSFETs
• Can be used for server and telecoms power distribution
• Appropriate for energy conversion in renewable power systems
What package characteristics affect thermal handling on board?
The device is supplied in a PG-HSOF-8 surface-mount package which permits low-inductance layout and improved heat transfer when soldered to a large copper area or dedicated heatsink planes.
How does gate voltage rating influence gate drive design?
With a maximum gate-source rating of 20V, gate drivers should be selected to remain within this limit while providing sufficient drive to achieve low on-resistance during conduction.
What environmental temperature range can it withstand during operation?
The component is specified to operate down to -55°C and up to 175°C, allowing use in systems exposed to extreme ambient or elevated junction temperatures.
Are there any limitations regarding automotive use?
The device is not classified to automotive standards, so it should not be specified where automotive-grade approvals are mandatory.
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