Infineon IGT65 Type N-Channel MOSFET, 70 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R025D2ATMA1
- N° de stock RS:
- 351-969
- Référence fabricant:
- IGT65R025D2ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
11,78 €
(TVA exclue)
14,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 1 945 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 11,78 € |
| 10 - 99 | 10,60 € |
| 100 + | 9,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-969
- Référence fabricant:
- IGT65R025D2ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGT65 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 236W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGT65 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 236W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IGT65 Series MOSFET, 650V Drain Source Voltage, 70A Continuous Drain Current - IGT65R025D2ATMA1
This MOSFET is a high-voltage switching transistor designed for demanding industrial environments. It operates across an extended temperature range and is supplied in a surface-mount package suited to compact boards. The device is intended for power conversion and switching roles where high voltage tolerance and robust continuous current handling are required.
Features and Benefits:
• 650V drain withstand for high-voltage switching applications
• 70A continuous drain capability for sustained load handling
• 0.03Ω Rds(on) for reduced conduction losses
• 236W maximum power dissipation for thermal headroom
• 11nC typical gate charge for faster switching transitions
• 10V gate rating compatible with standard gate-drive voltages
• 70A continuous drain capability for sustained load handling
• 0.03Ω Rds(on) for reduced conduction losses
• 236W maximum power dissipation for thermal headroom
• 11nC typical gate charge for faster switching transitions
• 10V gate rating compatible with standard gate-drive voltages
Applications
• Ideal for industrial switch-mode power supplies and inverters
• Suitable for motor control stages in high-voltage systems
• Used with high-voltage DC-DC converters for energy conversion
• Can be used for hard-switching topologies in power electronics
• Appropriate for telecoms power distribution and auxiliary supplies
• Suitable for motor control stages in high-voltage systems
• Used with high-voltage DC-DC converters for energy conversion
• Can be used for hard-switching topologies in power electronics
• Appropriate for telecoms power distribution and auxiliary supplies
What package style is used and how does it affect board assembly?
The device is supplied in a PG-HSOF-8 surface-mount package which facilitates automated reflow soldering and compact PCB layouts while providing multiple thermal and electrical leads.
What gate-drive considerations should be made for reliable operation?
Keep the gate drive within ±10V and provide a low-impedance return path to minimise switching transients and ensure predictable turn-on and turn-off timing.
How does the temperature range influence deployment locations?
The rated operating span from -55°C to 150°C allows placement in both cold-start and high-temperature industrial enclosures without derating the basic switching capability.
What thermal management strategies are recommended for continuous operation?
Use adequate copper area or dedicated heatsinking under the package, ensure good PCB thermal vias, and consider airflow to maintain junction temperatures within safe limits.
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