Infineon OptiMOS 5 Type N-Channel Power MOSFET, 55 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC152N15LS5ATMA1
- N° de stock RS:
- 349-398
- Référence fabricant:
- BSC152N15LS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
15,36 €
(TVA exclue)
18,585 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,072 € | 15,36 € |
| 50 - 95 | 2,918 € | 14,59 € |
| 100 - 495 | 2,70 € | 13,50 € |
| 500 - 995 | 2,492 € | 12,46 € |
| 1000 + | 2,39 € | 11,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-398
- Référence fabricant:
- BSC152N15LS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-TDSON-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-TDSON-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon OptiMOS 5 Series Power MOSFET, 150V Drain Source Voltage, 55A Continuous Drain Current - BSC152N15LS5ATMA1
This power MOSFET is a high-voltage N-channel transistor designed for switch and power-conversion roles in surface-mount assemblies. It operates across a broad temperature range, enabling use in demanding environments, and is constructed to meet industry environmental standards while providing primary switching functionality for high-current applications.
Features and Benefits:
• 150V drain-source rating enables high-voltage switching
• 55A continuous current supports heavy-load operation
• 15.2mΩ Rds(on) reduces conduction losses under load
• 23nC typical gate charge allows fast gate transitions
• 96W power dissipation maintains thermal handling capability
• PG-TDSON-8 surface package facilitates compact PCB layouts
• 55A continuous current supports heavy-load operation
• 15.2mΩ Rds(on) reduces conduction losses under load
• 23nC typical gate charge allows fast gate transitions
• 96W power dissipation maintains thermal handling capability
• PG-TDSON-8 surface package facilitates compact PCB layouts
Applications
• Suitable for DC-DC converters in power supplies
• Ideal for synchronous rectification in converters
• Used with motor drivers for medium-power electric motors
• Can be used for battery management and charging systems
• Appropriate for general-purpose high-current switching
• Ideal for synchronous rectification in converters
• Used with motor drivers for medium-power electric motors
• Can be used for battery management and charging systems
• Appropriate for general-purpose high-current switching
What gate voltage limits should I observe for safe operation?
The gate-source voltage must not exceed 20V to avoid damaging the gate dielectric.
How does the component behave across temperature extremes?
It is specified to function between -55°C and 150°C, permitting operation in both cold-start and elevated-temperature conditions without derating the basic switching capability.
What mounting considerations apply for thermal performance?
As a PG-TDSON-8 surface-mount device, it requires adequate PCB copper and thermal vias to dissipate up to 96W under specified conditions.
Is the device suitable for automotive adoption?
It is not designated as automotive-grade, so use in vehicle systems should consider additional qualification steps.
Liens connexes
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC123N08NS3GATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- Infineon OptiMOS 5 Type N-Channel Power MOSFET 150 V Enhancement, 8-Pin PG-TDSON-8 BSC105N15LS5ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7L028ATMA1
- Infineon OptiMOS-TM7 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-61 IAUCN04S7L053DATMA1