Infineon OptiMOS 5 N-Channel Power MOSFET, 87 A, 150 V Enhancement, 8-Pin PG-TDSON-8 BSC088N15LS5ATMA1
- N° de stock RS:
- 349-395
- Référence fabricant:
- BSC088N15LS5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
29,20 €
(TVA exclue)
35,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 5 000 unité(s) expédiée(s) à partir du 27 mai 2027
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 5,84 € | 29,20 € |
| 50 - 95 | 5,544 € | 27,72 € |
| 100 + | 5,14 € | 25,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-395
- Référence fabricant:
- BSC088N15LS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 5 | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 5 | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon OptiMOS 5 Series Power MOSFET, 150V Maximum Drain-Source Voltage, 139W Maximum Power Dissipation - BSC088N15LS5ATMA1
This power MOSFET is a surface-mount N‑channel enhancement device designed for high-current switching and power conversion tasks. It operates across a wide temperature range and is suited to applications requiring efficient conduction at elevated voltages. The device includes gate protection and complies with recognised material and temperature endurance standards while meeting RoHS requirements.
Features and Benefits:
• 8.8mΩ RDS(on) reduces conduction losses and improves efficiency
• 87A continuous drain current supports high-current designs
• 1.20V forward voltage lowers on-state voltage drop
• 40 nC typical gate charge enables Rapid switching transitions
• 20V gate-source limit provides robust gate protection
• 87A continuous drain current supports high-current designs
• 1.20V forward voltage lowers on-state voltage drop
• 40 nC typical gate charge enables Rapid switching transitions
• 20V gate-source limit provides robust gate protection
Applications
• Suitable for high-power DC-DC converters in industrial equipment
• Used with motor drivers requiring sustained high current
• Ideal for switch‑mode power supplies in telecoms systems
• Can be used for battery management and power distribution
• Suitable for high-power low-loss switching in inverters
• Used with motor drivers requiring sustained high current
• Ideal for switch‑mode power supplies in telecoms systems
• Can be used for battery management and power distribution
• Suitable for high-power low-loss switching in inverters
What thermal endurance does it offer under continuous operation?
It is rated to operate from -55°C up to 150°C, providing broad thermal headroom for demanding environments.
Which package and mounting style support Compact assemblies?
The PG‑TDSON‑8 package is intended for surface‑mount placement to enable space‑efficient board layouts.
What standards and material constraints apply to its manufacture?
The device meets DIN IEC 68‑1:55/175/56, IEC 61249‑2‑21 and is RoHS compliant.
How does the device behave in terms of switching performance?
With a typical gate charge of 40 nC and enhancement‑channel operation, it supports fast gate transitions for efficient switching.
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