Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- N° de stock RS:
- 349-390
- Référence fabricant:
- IQFH55N04NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
10,25 €
(TVA exclue)
12,402 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 3 000 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,125 € | 10,25 € |
| 20 - 198 | 4,61 € | 9,22 € |
| 200 - 998 | 4,255 € | 8,51 € |
| 1000 - 1998 | 3,95 € | 7,90 € |
| 2000 + | 3,535 € | 7,07 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-390
- Référence fabricant:
- IQFH55N04NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 451A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IQF | |
| Package Type | PG-TSON-12 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 214W | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 451A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IQF | ||
Package Type PG-TSON-12 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 214W | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.
Superior thermal resistance
N channel
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
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