Infineon Half Bridge HybridPACK N channel-Channel MOSFET Modules, 620 A, 750 V Enhancement, 30-Pin PG-TSON-12
- N° de stock RS:
- 762-980
- Référence fabricant:
- FS01MR08A8MA2CHPSA1
- Fabricant:
- Infineon
Visuel non contractuel
Sous-total (1 unité)*
2 004,42 €
(TVA exclue)
2 425,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 6 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 + | 2 004,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 762-980
- Référence fabricant:
- FS01MR08A8MA2CHPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N channel | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 620A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-TSON-12 | |
| Series | HybridPACK | |
| Mount Type | Screw | |
| Pin Count | 30 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 6.73V | |
| Typical Gate Charge Qg @ Vgs | 1.5μC | |
| Maximum Power Dissipation Pd | 20mW | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N channel | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 620A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-TSON-12 | ||
Series HybridPACK | ||
Mount Type Screw | ||
Pin Count 30 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 6.73V | ||
Typical Gate Charge Qg @ Vgs 1.5μC | ||
Maximum Power Dissipation Pd 20mW | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon HybridPACK Drive G2 module utilizes silicon carbide (SiC) MOSFETs, offering a maximum voltage of 750 V and a nominal current of 620 A. Its design features low on-resistance, minimal switching losses, and a robust insulation capability of 4.25 kV. Engineered for high performance, it maintains operational temperatures up to 200°C.
Compact design
High power density
Direct-cooled PinFin base plate
Integrated temperature sensing diode
PressFIT contact technology
RoHS compliant, lead-free
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