Infineon Type N-Channel MOSFET, 280 A, 1200 V Enhancement FF3MR12KM1HPHPSA1
- N° de stock RS:
- 349-316
- Référence fabricant:
- FF3MR12KM1HPHPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
675,54 €
(TVA exclue)
817,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 8 unité(s) expédiée(s) à partir du 23 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 675,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-316
- Référence fabricant:
- FF3MR12KM1HPHPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 6.32mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.59V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 60749, 60068, IEC 60747 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 6.32mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.59V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 60749, 60068, IEC 60747 | ||
Automotive Standard No | ||
- Pays d'origine :
- HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is designed in the well-known 62 mm housing, integrating M1H chip technology for high performance power applications. This module offers high current density, making it ideal for space-constrained systems that require robust performance. With low switching losses, it ensures greater efficiency at high switching frequencies. The superior gate oxide reliability enhances durability, extending the module’s operational life in demanding conditions.
Minimizes cooling efforts
Reduction in volume and size
Reduced system costs
Symmetrical module design
Standard construction technique
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