Infineon FF11MR12W2M1H_B70 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HB70BPSA1
- N° de stock RS:
- 348-975
- Référence fabricant:
- FF11MR12W2M1HB70BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
265,53 €
(TVA exclue)
321,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 15 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 + | 265,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-975
- Référence fabricant:
- FF11MR12W2M1HB70BPSA1
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | FF11MR12W2M1H_B70 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 20.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series FF11MR12W2M1H_B70 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 20.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 20mW | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module combines cutting-edge technology with superior design for high performance power applications. With a best-in-class packaging and a compact 12.25 mm height, it optimizes both space and performance. The module utilizes leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency, thermal performance, and reliability. Its very low module stray inductance minimizes power losses and improves switching behaviour.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Better thermal conductivity of DCB material
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