Infineon F4-11MR12W2M1H_B70 Type N-Channel MOSFET, 60 A, 1200 V Enhancement F411MR12W2M1HPB76BPSA1
- N° de stock RS:
- 349-250
- Référence fabricant:
- F411MR12W2M1HPB76BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
239,82 €
(TVA exclue)
290,18 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 18 unité(s) expédiée(s) à partir du 05 juin 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 239,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-250
- Référence fabricant:
- F411MR12W2M1HPB76BPSA1
- Fabricant:
- Infineon
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Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | F4-11MR12W2M1H_B70 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 23.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 60749, IEC 60747, 60068 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series F4-11MR12W2M1H_B70 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 23.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 60749, IEC 60747, 60068 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology. This MOSFET features best-in-class packaging with a compact 12 mm height, ensuring optimal performance while saving space. It utilizes leading-edge Wide Bandgap materials, enhancing power efficiency and thermal management. The design boasts very low module stray inductance, reducing power losses and improving switching speed.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
Liens connexes
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