Infineon OptiMOS Type N-Channel MOSFET, 7 A, 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1
- N° de stock RS:
- 349-313
- Référence fabricant:
- IPD60R600CM8XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
7,62 €
(TVA exclue)
9,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 490 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,762 € | 7,62 € |
| 100 - 240 | 0,724 € | 7,24 € |
| 250 - 490 | 0,672 € | 6,72 € |
| 500 - 990 | 0,618 € | 6,18 € |
| 1000 + | 0,594 € | 5,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-313
- Référence fabricant:
- IPD60R600CM8XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 64W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 64W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Significant reduction of switching and conduction losses
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Liens connexes
- Infineon IPD N-Channel MOSFET 600 V, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD047N03LF2SATMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD020N03LF2SATMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1
- Infineon IKD04N60RC2ATMA1 IGBT 600 V PG-TO252-3
- Infineon IKD10N60RFATMA1 IGBT 600 V PG-TO252-3