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Infineon OptiMOS Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1

N° de stock RS:: 348-988
Référence fabricant:: IPD60R180CM8XTMA1
Fabricant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1

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Désolés, nous ne savons pas quand ce produit sera réapprovisionné.

N° de stock RS:: 348-988
Référence fabricant:: IPD60R180CM8XTMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-TO252-3
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.18Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	127W
	Typical Gate Charge Qg @ Vgs	17nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-TO252-3
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.18Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 127W
	Typical Gate Charge Qg @ Vgs 17nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPD60R180CM8XTMA1

Pays d'origine :: MY

Infineon OptiMOS Series MOSFET, 600V Drain Source Voltage, 18A Continuous Drain Current - IPD60R180CM8XTMA1

This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in surface-mount assemblies. It operates across a wide temperature span and is intended for demanding electronic environments where robust voltage handling and compact mounting are required.

Features and Benefits:

• 600V drain-to-source rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 0.18 Ω low on-resistance reduces conduction losses in power circuits
• 127W maximum dissipation allows higher power throughput
• 20V gate threshold supports standard gate-drive voltages
• 17 nC typical gate charge permits fast switching with manageable drive energy

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with DC-DC converters in energy management systems
• Can be used for inverter front-ends in renewable installations
• Appropriate for compact surface-mount power modules

What package type is used for efficient PCB mounting?

It is supplied in a TO-252 style surface-mount package with three pins for streamlined board assembly.

How does it cope with extreme ambient conditions?

The device is rated to function from -55 °C up to 150 °C, accommodating elevated junction temperatures in thermally constrained designs.

What gate-drive considerations should be made for switching performance?

Drive circuits should provide up to 20V gate-to-source excursion and account for the 17 nC gate charge when sizing driver current and transition times.

Is this device suitable for automotive-certified systems?

It is not specified to meet automotive standards and should be evaluated against automotive regulatory requirements before use in certified vehicle systems.

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