Infineon OptiMOS N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3 IPD95R1K2P7ATMA1

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Sous-total (1 paquet de 5 unités)*

9,60 €

(TVA exclue)

11,60 €

(TVA incluse)

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  • Plus 80 unité(s) expédiée(s) à partir du 31 octobre 2026
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Unité
Prix par unité
le paquet*
5 - 451,92 €9,60 €
50 - 951,742 €8,71 €
100 - 2451,60 €8,00 €
250 - 9951,476 €7,38 €
1000 +1,368 €6,84 €

*Prix donné à titre indicatif

N° de stock RS:
273-2786
Référence fabricant:
IPD95R1K2P7ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

950V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

15nC

Maximum Power Dissipation Pd

52W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 52W Power Dissipation, 950V Drain-Source Voltage - IPD95R1K2P7ATMA1


This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching in demanding temperature ranges. It operates as an enhancement-mode device suitable for applications that require a balance of voltage withstand capability and moderate continuous current. The component is supplied in a PG-TO252-3 package and conforms to RoHS environmental restrictions.

Features and Benefits:


• 950V drain-source capability allowing high-voltage switching
• 6A continuous drain current supporting medium-power loads
• 52W power dissipation for thermal handling in converters
• 1.2Ω RDS(on) minimising conduction losses at low frequencies
• 15nC typical gate charge enabling controlled switching transitions

Applications


• Suitable for high-voltage power converters and inverters
• Ideal for low-frequency switching in industrial supplies
• Used with surface-mount boards requiring Compact power devices
• Can be used for systems operating from -55°C to 150°C
• Used for discrete switching stages in power management

What gate voltage limits must be observed for correct operation?


The gate must not exceed ±20V relative to the source to prevent electrical overstress.

How does the device perform across temperature extremes?


It maintains specified operation from -55°C up to 150°C, enabling a wide thermal margin for harsh environments.

What package and mounting method does it use?


It is supplied in a PG-TO252-3 package intended for surface mounting to provide Compact PCB integration.

Is this component suitable for automotive standard compliance?


It is not specified as meeting automotive-grade standards and should not be assumed to be compliant.

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