Infineon CoolSiCTM Trench MOSFET Type N-Channel MOSFET, 200 A, 1200 V Enhancement EasyDUAL FF4MR12W2M1HPB11BPSA1
- N° de stock RS:
- 349-253
- Référence fabricant:
- FF4MR12W2M1HPB11BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
339,96 €
(TVA exclue)
411,35 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 18 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 + | 339,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-253
- Référence fabricant:
- FF4MR12W2M1HPB11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyDUAL | |
| Series | CoolSiCTM Trench MOSFET | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 8.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60068, IEC 60747, IEC 60749 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyDUAL | ||
Series CoolSiCTM Trench MOSFET | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 8.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60068, IEC 60747, IEC 60749 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon EasyDUAL 2B CoolSiC MOSFET half bridge module is a 1200 V module featuring a low 4 mΩ gate resistance G1 and is equipped with an integrated NTC temperature sensor for precise thermal monitoring. It also includes pre applied thermal interface material for enhanced heat dissipation and utilizes PressFIT Contact Technology, ensuring reliable and efficient electrical connections. This module is designed for high performance applications where efficient power conversion and thermal management are critical.
Rugged mounting due to integrated mounting clamps
PressFIT contact technology
Integrated NTC temperature sensor
Pre applied thermal interface material
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