Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ
- N° de stock RS:
- 152-8344
- Référence fabricant:
- PMDXB950UPELZ
- Fabricant:
- Nexperia
Sous-total (1 paquet de 25 unités)*
6,475 €
(TVA exclue)
7,825 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 7 075 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 + | 0,259 € | 6,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-8344
- Référence fabricant:
- PMDXB950UPELZ
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type P | |
| Product Type | Trench MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | -20V | |
| Series | Trench MOSFET | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4025mW | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1.19nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Width | 1.05 mm | |
| Height | 0.36mm | |
| Standards/Approvals | No | |
| Length | 1.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type P | ||
Product Type Trench MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds -20V | ||
Series Trench MOSFET | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4025mW | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1.19nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Width 1.05 mm | ||
Height 0.36mm | ||
Standards/Approvals No | ||
Length 1.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low leakage current
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
Relay driver
High-speed line driver
High-side load switch
Switching circuits
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