Infineon EasyDUAL N-Channel MOSFET, 50 A, 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- N° de stock RS:
- 284-822
- Référence fabricant:
- FF17MR12W1M1HB11BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
57,53 €
(TVA exclue)
69,61 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 24 unité(s) expédiée(s) à partir du 21 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 57,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-822
- Référence fabricant:
- FF17MR12W1M1HB11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY1B | |
| Series | EasyDUAL | |
| Mount Type | Screw | |
| Pin Count | 23 | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.35V | |
| Typical Gate Charge Qg @ Vgs | 0.149μC | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY1B | ||
Series EasyDUAL | ||
Mount Type Screw | ||
Pin Count 23 | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.35V | ||
Typical Gate Charge Qg @ Vgs 0.149μC | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
The Infineon MOSFET Module represents a significant advancement in power semiconductor technology, designed to meet the rigorous demands of high frequency switching applications. This innovative module incorporates CoolSiC trench MOSFETs, delivering unparalleled efficiency and reliability. With a robust design tailored for industrial applications, it ensures low switching losses and excellent thermal performance. The integrated PressFIT contact technology simplifies installation while maintaining a secure connection. This module is an Ideal choice for applications such as DC/DC converters and UPS systems, revolutionising energy management with its compact, Durable construction.
Low inductive design optimises dynamic performance
Integrated temperature sensor enhances safety
Rugged mounting ensures reliability in demanding environments
Qualified for industrial applications per IEC standards
Ideal for DC charging in electric vehicles
Streamlined installation with PressFIT technology
Liens connexes
- Infineon EasyDUAL Type N-Channel MOSFET 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- Infineon FS55MR12W1M1H_B11 Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY1B
- Infineon FS55MR12W1M1H_B11 Type N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY1B FS55MR12W1M1HB11NPSA1
- Infineon MOSFET 1200 V AG-EASY1BS-1
- Infineon MOSFET 1200 V AG-EASY1BS-1 FF08MR12W1MA1B11ABPSA1
- Infineon IGBT, 35 A 1200 V AG-EASY1B-711
- Infineon FS35R12W1T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY1B-711
- Infineon CoolSiCTM Trench MOSFET Type N-Channel MOSFET 1200 V Enhancement EasyDUAL FF4MR12W2M1HPB11BPSA1