Infineon EasyDUAL Type N-Channel MOSFET, 50 A, 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1

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148,70 €

(TVA exclue)

179,93 €

(TVA incluse)

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N° de stock RS:
284-822
Référence fabricant:
FF17MR12W1M1HB11BPSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

1200V

Package Type

AG-EASY1B

Series

EasyDUAL

Mount Type

Screw

Pin Count

23

Maximum Drain Source Resistance Rds

34.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.35V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Typical Gate Charge Qg @ Vgs

0.149μC

Maximum Power Dissipation Pd

20mW

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60749, IEC 60747, IEC 60068

Automotive Standard

No

The Infineon MOSFET Module represents a significant advancement in power semiconductor technology, designed to meet the rigorous demands of high frequency switching applications. This innovative module incorporates CoolSiC trench MOSFETs, delivering unparalleled efficiency and reliability. With a robust design tailored for industrial applications, it ensures low switching losses and excellent thermal performance. The integrated PressFIT contact technology simplifies installation while maintaining a secure connection. This module is an Ideal choice for applications such as DC/DC converters and UPS systems, revolutionising energy management with its compact, Durable construction.

Low inductive design optimises dynamic performance

Integrated temperature sensor enhances safety

Rugged mounting ensures reliability in demanding environments

Qualified for industrial applications per IEC standards

Ideal for DC charging in electric vehicles

Streamlined installation with PressFIT technology

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