Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1
- N° de stock RS:
- 348-978
- Référence fabricant:
- FF6MR12W2M1HPB11BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
358,76 €
(TVA exclue)
434,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 18 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 + | 358,76 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-978
- Référence fabricant:
- FF6MR12W2M1HPB11BPSA1
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | CoolSiC Trench MOSFET | |
| Package Type | EasyDUAL | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 11.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.35V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60749, IEC 60068 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series CoolSiC Trench MOSFET | ||
Package Type EasyDUAL | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 11.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.35V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60749, IEC 60068 | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is designed to deliver high performance power solutions with best-in-class packaging, featuring a compact 12 mm height for efficient space utilization. The module incorporates leading-edge Wide Bandgap (WBG) materials, providing superior efficiency, reliability, and thermal performance. With very low module stray inductance, it ensures minimized power losses and enhanced switching dynamics. The module is powered by the Enhanced CoolSiC MOSFET Gen 1, offering improved thermal management and efficiency, making it ideal for demanding power applications.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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