Infineon IPP Type N-Channel Power Transistor, 98 A, 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1
- N° de stock RS:
- 349-117
- Référence fabricant:
- IPP073N13NM6AKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
14,70 €
(TVA exclue)
17,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 500 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,94 € | 14,70 € |
| 50 - 95 | 2,794 € | 13,97 € |
| 100 + | 2,586 € | 12,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-117
- Référence fabricant:
- IPP073N13NM6AKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 98A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 158W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 98A | ||
Maximum Drain Source Voltage Vds 135V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 158W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed to deliver high efficiency in power applications. Key features include very low on-resistance (RDS(on)), which minimizes conduction losses, and an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts very low reverse recovery charge (Qrr), enhancing efficiency and reducing switching losses. The device is equipped with a high avalanche energy rating, making it suitable for demanding conditions, and can operate at a high temperature of 175°C, ensuring reliability even in harsh environments.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
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