Infineon IPP Type N-Channel Power Transistor, 136 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1
- N° de stock RS:
- 349-410
- Référence fabricant:
- IPP069N20NM6AKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,30 €
(TVA exclue)
10,04 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 498 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 500 unité(s) expédiée(s) à partir du 18 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,30 € |
| 10 - 99 | 7,48 € |
| 100 - 499 | 6,89 € |
| 500 - 999 | 6,41 € |
| 1000 + | 5,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-410
- Référence fabricant:
- IPP069N20NM6AKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 136A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TO220-3 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, J-STD-020 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 136A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TO220-3 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, J-STD-020 | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IPP Series Power Transistor, 200V Maximum Drain Source Voltage, 136A Maximum Continuous Drain Current - IPP069N20NM6AKSA1
This power transistor is a high-current N-channel enhancement MOSFET designed for power switching and conversion duties in through-hole assemblies. It operates over a wide temperature span and is intended for applications requiring substantial continuous drain current and elevated voltage handling, housed in a PG-TO220-3 package for straightforward mounting.
Features and Benefits:
• 200V drain voltage enables high-voltage switching tasks
• 136A continuous drain current supports heavy load operation
• 6.9mΩ Rds(on) minimises conduction losses under load
• 300W power dissipation allows sustained high-power use
• 73nC typical gate charge reduces switching transition energy
• 1V forward voltage lowers diode conduction drop
• 136A continuous drain current supports heavy load operation
• 6.9mΩ Rds(on) minimises conduction losses under load
• 300W power dissipation allows sustained high-power use
• 73nC typical gate charge reduces switching transition energy
• 1V forward voltage lowers diode conduction drop
Applications
• Suitable for high-power motor drive stages
• Ideal for industrial power supplies and inverters
• Used with battery management systems for high-current paths
• Can be used for server and telecoms power regulation
• Suitable for audio amplifier output stages requiring high current
• Ideal for industrial power supplies and inverters
• Used with battery management systems for high-current paths
• Can be used for server and telecoms power regulation
• Suitable for audio amplifier output stages requiring high current
What gate drive considerations are necessary for fast switching?
The gate can tolerate up to 20V
design the driver to supply sufficient peak current to charge the 73nC gate quickly while observing the maximum Vgs limit.
How does temperature range affect placement on a heatsink?
With an operating range from -55°C to 175°C, thermal interface selection and heatsink sizing must account for the 300W dissipation and intended ambient conditions.
What mounting method is required for PCB assembly?
The component is configured for through-hole mounting in a PG-TO220-3 package, enabling secure mechanical attachment and effective thermal coupling to external sinks.
Are there limitations on reverse conduction behaviour?
The device exhibits a forward diode characteristic with approximately 1V drop
circuit design should account for this during synchronous or body-diode conduction events.
Liens connexes
- Infineon IPP Type N-Channel Power Transistor 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1
- Infineon IPP Type N-Channel Power Transistor 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1
- Infineon IPP Type N-Channel Power Transistor 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3