Infineon IPP Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- N° de stock RS:
- 349-001
- Référence fabricant:
- IPP60R037CM8XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
14,69 €
(TVA exclue)
17,774 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 374 unité(s) expédiée(s) à partir du 10 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 7,345 € | 14,69 € |
| 20 - 198 | 6,62 € | 13,24 € |
| 200 + | 6,095 € | 12,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-001
- Référence fabricant:
- IPP60R037CM8XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO220-3 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 390W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO220-3 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 390W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
- Pays d'origine :
- MY
Infineon IPP Series MOSFET, 600V Drain Source Voltage, 70A Continuous Drain Current - IPP60R037CM8XKSA1
This MOSFET is a high-voltage N-channel switching transistor designed for demanding power-conversion environments. It operates across a wide temperature span and is supplied in a through-hole PG-TO220-3 package, making it suitable for robust board-mount applications where thermal management and reliable switching are required.
Features and Benefits:
• 600V rated drain voltage for high-voltage switching
• 70A continuous drain current for heavy current handling
• 37mΩ low Rds(on) to reduce conduction losses
• 390W power dissipation for sustained power applications
• 79nC gate charge enabling predictable switching behaviour
• 70A continuous drain current for heavy current handling
• 37mΩ low Rds(on) to reduce conduction losses
• 390W power dissipation for sustained power applications
• 79nC gate charge enabling predictable switching behaviour
Applications
• Suitable for power supplies and converter stages
• Ideal for industrial motor drive circuits
• Used with high-voltage inverter assemblies
• Can be used for high-current switch-mode supplies
• Ideal for industrial motor drive circuits
• Used with high-voltage inverter assemblies
• Can be used for high-current switch-mode supplies
What gate voltage limits must I observe to protect the device?
The gate-to-source rating allows up to 30V
designs should include gate drives and protection that keep Vgs within this limit to prevent damage.
How does the device cope with extreme ambient temperatures during operation?
It is specified to operate from -55°C up to 150°C, permitting use in both cold-start conditions and elevated-temperature cabinets with appropriate thermal design.
What packaging and mounting considerations affect thermal performance?
The PG-TO220-3 through-hole format facilitates direct heatsink attachment and through-hole soldering for robust thermal conduction and mechanical stability.
How does the device behave in terms of channel conduction mode?
It is an enhancement-mode N-channel device, requiring a positive gate drive relative to source to switch into conduction.
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