Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- N° de stock RS:
- 349-000
- Référence fabricant:
- IPP60R016CM8XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
13,80 €
(TVA exclue)
16,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 497 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 13,80 € |
| 10 - 99 | 12,42 € |
| 100 + | 11,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-000
- Référence fabricant:
- IPP60R016CM8XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO220-3 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Maximum Power Dissipation Pd | 625W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO220-3 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Maximum Power Dissipation Pd 625W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IPP Series MOSFET, 600V Drain Source Voltage, 135A Continuous Drain Current - IPP60R016CM8XKSA1
This MOSFET is a high-voltage N-channel transistor designed for power switching and control in demanding electronic systems. It operates across a wide temperature span suitable for harsh environments and is supplied in a through-hole TO-220 package for straightforward heatsinking and board mounting. The device conforms to standard semiconductor approvals and is intended for applications requiring substantial current handling and thermal endurance.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 135A continuous drain current supports heavy load currents
• 16mΩ maximum Rds(on) reduces conduction losses under load
• 625W maximum power dissipation allows elevated thermal loading
• 171nC typical gate charge aids predictable switching behaviour
• Vgs±30V tolerance permits robust gate-drive margins
• 135A continuous drain current supports heavy load currents
• 16mΩ maximum Rds(on) reduces conduction losses under load
• 625W maximum power dissipation allows elevated thermal loading
• 171nC typical gate charge aids predictable switching behaviour
• Vgs±30V tolerance permits robust gate-drive margins
Applications
• Suitable for mains-level power converters and inverters
• Ideal for industrial motor drive switching stages
• Used with high-current DC-DC conversion modules
• Can be used for electronic load and power test equipment
• Suitable for power supplies in telecommunications infrastructure
• Ideal for industrial motor drive switching stages
• Used with high-current DC-DC conversion modules
• Can be used for electronic load and power test equipment
• Suitable for power supplies in telecommunications infrastructure
What ambient extremes can it withstand in operation?
It is rated for continuous operation from -55°C up to 175°C, permitting use in both cold-start and high-temperature environments.
How many pins and what mounting style are provided?
The device uses a three-pin configuration and is designed for through-hole mounting in a standard TO-220 footprint.
What gate-drive considerations are necessary for switching?
Gate voltage should remain within ±30V to protect the gate
the typical gate charge of 171nC should be accounted for when sizing drivers to meet desired switching speeds.
Which approvals indicate standard compliance for component selection?
It carries JEDEC recognised qualifications and RoHS conformity for material and manufacturing standards.
Liens connexes
- Infineon IPP Type N-Channel Power Transistor 135 V Enhancement, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1
- Infineon IPP Type N-Channel Power Transistor 200 V Enhancement, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1
- Infineon IPP Type N-Channel Power Transistor 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1
- Infineon IPP Type N-Channel Power Transistor 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3