Infineon IMB Type N-Channel MOSFET, 8.1 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- N° de stock RS:
- 349-107
- Référence fabricant:
- IMBG120R234M2HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
9,40 €
(TVA exclue)
11,38 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 21 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 4,70 € | 9,40 € |
| 20 - 198 | 4,235 € | 8,47 € |
| 200 - 998 | 3,905 € | 7,81 € |
| 1000 - 1998 | 3,62 € | 7,24 € |
| 2000 + | 3,245 € | 6,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-107
- Référence fabricant:
- IMBG120R234M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMB | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 622mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Power Dissipation Pd | 80W | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Maximum Operating Temperature | 200°C | |
| Length | 15mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 4.5mm | |
| Width | 10.2 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMB | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 622mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Power Dissipation Pd 80W | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Maximum Operating Temperature 200°C | ||
Length 15mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 4.5mm | ||
Width 10.2 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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