Infineon IMB N-Channel MOSFET, 8.1 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- N° de stock RS:
- 349-107
- Référence fabricant:
- IMBG120R234M2HXTMA1
- Fabricant:
- Infineon
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9,41 €
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11,39 €
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Unité | Prix par unité | le paquet* | Économie |
|---|---|---|---|
| 2 - 18 | 4,705 € | 9,41 € | - |
| 20 - 198 | 4,24 € | 8,48 € | 9% |
| 200 - 998 | 3,905 € | 7,81 € | 17% |
| 1000 - 1998 | 3,625 € | 7,25 € | 22% |
| 2000 + | 3,24 € | 6,48 € | 31% |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-107
- Référence fabricant:
- IMBG120R234M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 622mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Maximum Power Dissipation Pd | 80W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 200°C | |
| Width | 10.2mm | |
| Length | 15mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 622mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Maximum Power Dissipation Pd 80W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 200°C | ||
Width 10.2mm | ||
Length 15mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 4.5mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon IMB Series MOSFET, 1200V Maximum Drain Source Voltage, 80W Maximum Power Dissipation - IMBG120R234M2HXTMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications. It delivers controlled conduction for switching and conversion functions while operating across a wide ambient range. The component is configured in a seven-pin PG-TO263-7 package for integration onto power boards and is suitable where robust gate drive and high blocking voltage are required.
Features and Benefits:
• 1200V drain rating enables high-voltage switching applications
• 8.1A continuous drain current supports moderate power throughput
• 80W power dissipation allows sustained thermal loading
• 622mΩ low Rds(on) reduces conduction losses during operation
• 7.9nC gate charge enables relatively fast switching transitions
• 25V gate tolerance ensures compatibility with common gate drives
• 8.1A continuous drain current supports moderate power throughput
• 80W power dissipation allows sustained thermal loading
• 622mΩ low Rds(on) reduces conduction losses during operation
• 7.9nC gate charge enables relatively fast switching transitions
• 25V gate tolerance ensures compatibility with common gate drives
Applications
• Used for high-voltage DC-DC converters in industrial systems
• Suitable for power switching in renewable-energy inverters
• Ideal for motor-drive front-ends with elevated voltage rails
• Can be used for switch-mode power supplies and regulators
• Used with thermal management for compact power modules
• Suitable for power switching in renewable-energy inverters
• Ideal for motor-drive front-ends with elevated voltage rails
• Can be used for switch-mode power supplies and regulators
• Used with thermal management for compact power modules
What thermal extremes can this device withstand during operation?
It is rated to function between -55°C and 200°C, allowing use in environments with very low temperatures and exceptionally high junction or ambient conditions when suitably mounted and cooled.
How does the pin configuration affect PCB design and mounting?
The seven-pin PG-TO263-7 layout concentrates power and gate connections for effective heat transfer to the board and simplifies routing of drain and source tracks for low‑impedance current paths.
What standards and environmental constraints are reflected in its manufacture?
Production conforms to JEDEC47/20/22 handling recommendations and the device meets RoHS requirements for restricted substances.
How should designers account for switching performance in high-frequency circuits?
Use the typical 7.9nC gate charge figure to estimate gate-drive energy and select gate drivers and deadtime settings to balance switching losses and electromagnetic emission control.
Liens connexes
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