Infineon IMB N-Channel MOSFET, 21.2 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R116M2HXTMA1
- N° de stock RS:
- 349-104
- Référence fabricant:
- IMBG120R116M2HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
12,19 €
(TVA exclue)
14,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 992 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,095 € | 12,19 € |
| 20 - 198 | 5,49 € | 10,98 € |
| 200 + | 5,06 € | 10,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-104
- Référence fabricant:
- IMBG120R116M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21.2A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 307mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 123W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Width | 10.2mm | |
| Length | 15mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21.2A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 307mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 123W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Width 10.2mm | ||
Length 15mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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