Infineon IMB N-Channel MOSFET, 10.5 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1
- N° de stock RS:
- 349-105
- Référence fabricant:
- IMBG120R181M2HXTMA1
- Fabricant:
- Infineon
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Ajoutez 20 de plus pour économiser 10,50 €
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
10,42 €
(TVA exclue)
12,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 novembre 2027
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Unité | Prix par unité | le paquet* | Économie |
|---|---|---|---|
| 2 - 18 | 5,21 € | 10,42 € | - |
| 20 - 198 | 4,685 € | 9,37 € | 10,50 € |
| 200 - 998 | 4,315 € | 8,63 € | 179,00 € |
| 1000 - 1998 | 4,01 € | 8,02 € | 1 200,00 € |
| 2000 + | 3,60 € | 7,20 € | 3 220,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-105
- Référence fabricant:
- IMBG120R181M2HXTMA1
- Fabricant:
- Infineon
Spécifications
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Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 181.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 94W | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Length | 15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 181.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 94W | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Width 10.2mm | ||
Height 4.5mm | ||
Length 15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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