Infineon IMB Type N-Channel MOSFET, 21 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R078M2HXTMA1
- N° de stock RS:
- 349-103
- Référence fabricant:
- IMBG120R078M2HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
6,55 €
(TVA exclue)
7,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 6,55 € |
| 10 - 99 | 5,90 € |
| 100 - 499 | 5,44 € |
| 500 - 999 | 5,04 € |
| 1000 + | 4,52 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-103
- Référence fabricant:
- IMBG120R078M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 78.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Typical Gate Charge Qg @ Vgs | 20.6nC | |
| Maximum Power Dissipation Pd | 158W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.2 mm | |
| Length | 15mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 78.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Typical Gate Charge Qg @ Vgs 20.6nC | ||
Maximum Power Dissipation Pd 158W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 10.2 mm | ||
Length 15mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 4.5mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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