Infineon IMB N-Channel MOSFET, 21 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R078M2HXTMA1
- N° de stock RS:
- 349-103
- Référence fabricant:
- IMBG120R078M2HXTMA1
- Fabricant:
- Infineon
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7,08 €
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8,57 €
(TVA incluse)
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Unité | Prix par unité | Économie |
|---|---|---|
| 1 - 9 | 7,08 € | - |
| 10 - 99 | 6,38 € | 9% |
| 100 - 499 | 5,87 € | 17% |
| 500 - 999 | 5,45 € | 23% |
| 1000 + | 4,88 € | 31% |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-103
- Référence fabricant:
- IMBG120R078M2HXTMA1
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 78.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 20.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 158W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 15mm | |
| Width | 10.2mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 78.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 20.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 158W | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 15mm | ||
Width 10.2mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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