Infineon IMB N-Channel MOSFET, 29 A, 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R053M2HXTMA1
- N° de stock RS:
- 349-102
- Référence fabricant:
- IMBG120R053M2HXTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,12 €
(TVA exclue)
9,83 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 966 unité(s) expédiée(s) à partir du 14 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,12 € |
| 10 - 99 | 7,31 € |
| 100 - 499 | 6,73 € |
| 500 - 999 | 6,25 € |
| 1000 + | 5,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-102
- Référence fabricant:
- IMBG120R053M2HXTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 52.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 205W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Width | 10.2mm | |
| Height | 4.5mm | |
| Length | 15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 52.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 205W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Width 10.2mm | ||
Height 4.5mm | ||
Length 15mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
Liens connexes
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R040M2HXTMA1
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R017M2HXTMA1
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R078M2HXTMA1
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R116M2HXTMA1
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R022M2HXTMA1
- Infineon IMB N-Channel MOSFET 1.2 kV Enhancement, 7-Pin PG-TO263-7 IMBG120R026M2HXTMA1