Name: Infineon HEXFET N-Channel MOSFET, 76 A, 200 V Enhancement TO-220 IRFB4127PBF
Brand: Infineon
SKU: 257-5514
Price: 3.147 EUR
Availability: InStock

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	76A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	PCB
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	375W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 76A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type PCB
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 375W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 375W Maximum Power Dissipation - IRFB4127PBF

This MOSFET is a high-voltage, enhancement-mode N-channel transistor designed for PCB mounting in a TO-220 package. It is intended for power switching and control tasks where substantial current handling and thermal capacity are required, and it operates across an extended industrial temperature range while meeting RoHS restrictions.

Features and Benefits:

• 20mΩ Rds(on) enabling reduced conduction losses
• 76A continuous drain current supporting high-load switching
• 200V drain-source rating permitting high-voltage applications
• 375W power dissipation improving thermal headroom
• 1.3V forward voltage minimising gate drive drop

Applications

• Suitable for power-supply switching in industrial systems
• Used with motor drivers requiring high current handling
• Ideal for DC-DC converters in high-voltage rails
• Can be used for inverter-stage switching on PCBs

What gate voltage limits must be observed?

The gate-to-source voltage must not exceed 20V to avoid damaging the gate dielectric.

What temperature range can it withstand during operation?

It is specified to function between -55°C and 175°C for broad industrial use.

Is the device suitable for surface mounting on circuit boards?

It is intended for PCB mounting in a through-hole TO-220 package for secure thermal and mechanical attachment.

Does it conform to environmental material restrictions?

The component is RoHS-compliant, meeting required restrictions on hazardous substances.

314,70 €

(TVA exclue)

3,147 €/unité

Infineon HEXFET N-Channel MOSFET, 76 A, 200 V Enhancement TO-220 IRFB4127PBF

Frais de livraison offerts pour toute commande de plus de 90,00 €