Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 12 V Enhancement, 3-Pin Micro IRLML6401TRPBF
- N° de stock RS:
- 301-316
- Référence fabricant:
- IRLML6401TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
2,44 €
(TVA exclue)
2,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- Plus 25 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 130 unité(s) expédiée(s) à partir du 31 août 2026
- 2 020 unité(s) finale(s) expédiée(s) à partir du 07 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,488 € | 2,44 € |
| 50 - 245 | 0,412 € | 2,06 € |
| 250 - 495 | 0,316 € | 1,58 € |
| 500 - 1245 | 0,266 € | 1,33 € |
| 1250 + | 0,22 € | 1,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 301-316
- Référence fabricant:
- IRLML6401TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | Micro | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type Micro | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF
This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.
Features & Benefits
• Advanced processing for very low on-resistance
• Maximum drain source voltage of 12V
• Continuous drain current capability of 4.3A
• Junction temperature tolerance up to 150°C
• Optimised for fast switching applications, enhancing efficiency
• Compact SOT-23 package for space-efficient circuit designs
Applications
• Battery and load management systems
• Portable electronics where low-profile components are required
• Power management solutions in PCMCIA cards
• Automation systems that require dependable switching
• Electronic circuits needing a compact surface mount design
What is the impact of higher temperatures on performance?
Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.
How does the gate threshold voltage affect operation?
The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.
Is this product suited for fast-switching applications?
Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.
What precautions should be taken during installation?
It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.
Can this device be used for high-power applications?
The device can continuously manage 4.3A; however, evaluating the specific application's power requirements and thermal management is essential for optimal performance.
Liens connexes
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