Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 12 V Enhancement, 3-Pin Micro

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246,00 €

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297,00 €

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3000 - 30000,082 €246,00 €
6000 - 60000,077 €231,00 €
9000 +0,073 €219,00 €

*Prix donné à titre indicatif

N° de stock RS:
919-4713
Référence fabricant:
IRLML6401TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4.3A

Maximum Drain Source Voltage Vds

12V

Package Type

Micro

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.3W

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

No

Width

1.4 mm

Length

3.04mm

Automotive Standard

No

Pays d'origine :
PH

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF


This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.

Features & Benefits


• Advanced processing for very low on-resistance

• Maximum drain source voltage of 12V

• Continuous drain current capability of 4.3A

• Junction temperature tolerance up to 150°C

• Optimised for fast switching applications, enhancing efficiency

• Compact SOT-23 package for space-efficient circuit designs

Applications


• Battery and load management systems

• Portable electronics where low-profile components are required

• Power management solutions in PCMCIA cards

• Automation systems that require dependable switching

• Electronic circuits needing a compact surface mount design

What is the impact of higher temperatures on performance?


Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.

How does the gate threshold voltage affect operation?


The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.

Is this product suited for fast-switching applications?


Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.

What precautions should be taken during installation?


It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.

Can this device be used for high-power applications?


The device can continuously manage 4.3A; however, evaluating the specific application's power requirements and thermal management is essential for optimal performance.

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