Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC037N12NM6ATMA1

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Actuellement indisponible
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Options de conditionnement :
N° de stock RS:
285-045
Référence fabricant:
ISC037N12NM6ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

120V

Package Type

PG-TDSON-8 FL

Series

OptiMOS 6 Power Transistor

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

The Infineon MOSFET features is a high performing N channel Power Transistor that delivers exceptional efficiency and reliability for a wide array of applications. Featuring innovative thermal characteristics, this component excels in demanding environments with temperatures reaching up to 175°C. Built using cutting edge OptiMOS technology, it ensures minimal energy losses and enhanced switching capabilities, making it Ideal for high frequency applications. Whether deployed in industrial settings or used in synchronous rectification, this device conforms to stringent RoHS compliance, ensuring it meets modern environmental standards.

Optimised for high frequency switching

Pb free lead plating for compliance

MSL 1 classified for reliability

Low reverse recovery charge improves efficiency

High avalanche energy rating for protection

Excellent gate charge reduces drive losses

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