Infineon ISC Type N-Channel Power Transistor, 74 A, 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1
- N° de stock RS:
- 349-149
- Référence fabricant:
- ISC151N20NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
11,98 €
(TVA exclue)
14,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 4 970 unité(s) expédiée(s) à partir du 25 mars 2027
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,99 € | 11,98 € |
| 20 - 198 | 5,39 € | 10,78 € |
| 200 - 998 | 4,97 € | 9,94 € |
| 1000 - 1998 | 4,615 € | 9,23 € |
| 2000 + | 4,135 € | 8,27 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-149
- Référence fabricant:
- ISC151N20NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon ISC Series Power Transistor, 200W Maximum Power Dissipation, 200V Maximum Drain Source Voltage - ISC151N20NM6ATMA1
This power transistor is a high-current N-channel enhancement MOSFET designed for surface-mount applications where robust switching and thermal performance are required. It operates across a wide temperature range and is intended for power conversion and control tasks in demanding electronic systems, offering low forward voltage and a compact PG-TDSON-8 FL package for space-constrained assemblies.
Features and Benefits:
• 200V rating enables high-voltage switching capability
• 74A continuous current for heavy-load handling
• 15.1mΩ Rds(on) reduces conduction losses at high current
• 200W power dissipation supports elevated thermal load
• 31nC gate charge for fast driven switching control
• -55°C to175°C range suits extreme-temperature operation
• 74A continuous current for heavy-load handling
• 15.1mΩ Rds(on) reduces conduction losses at high current
• 200W power dissipation supports elevated thermal load
• 31nC gate charge for fast driven switching control
• -55°C to175°C range suits extreme-temperature operation
Applications
• Suitable for synchronous buck converter power stage
• Ideal for motor drive inverter leg switching
• Used with high-current power distribution modules
• Can be used for server power-supply transistors
• Suitable for industrial switching regulator designs
• Ideal for motor drive inverter leg switching
• Used with high-current power distribution modules
• Can be used for server power-supply transistors
• Suitable for industrial switching regulator designs
What mounting method does it require for assembly?
It is supplied in a surface-mount PG-TDSON-8 FL package that is intended for reflow soldering to PCB landings.
What voltage stress can the device withstand in switching environments?
The device is specified to handle a maximum drain-source voltage of 200V during operation.
How does gate drive requirement affect controller selection?
The maximum gate-source tolerance is 20V and the typical gate charge at Vgs is 31nC, which determines driver current and timing needs.
What thermal considerations are recommended for high-power use?
With a maximum power dissipation of 200W, adequate PCB thermal alleviation and heat-spreading measures are necessary to manage junction temperature.
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