Infineon ISC Type N-Channel Power Transistor, 74 A, 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1
- N° de stock RS:
- 349-149
- Référence fabricant:
- ISC151N20NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
11,13 €
(TVA exclue)
13,468 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 5 000 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,565 € | 11,13 € |
| 20 - 198 | 5,01 € | 10,02 € |
| 200 - 998 | 4,625 € | 9,25 € |
| 1000 - 1998 | 4,29 € | 8,58 € |
| 2000 + | 3,84 € | 7,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-149
- Référence fabricant:
- ISC151N20NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TDSON-8 FL | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TDSON-8 FL | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps to minimize conduction losses and improve system efficiency. With an excellent gate charge x RDS(on) product (FOM), this transistor ensures optimized switching performance. It also offers very low reverse recovery charge (Qrr), reducing switching losses and enhancing overall efficiency in fast-switching circuits. Designed to operate at a 175°C temperature, it provides high reliability in demanding environments and offers superior thermal performance for robust operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
100% avalanche tested
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