Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -22 A, 150 V Enhancement, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1
- N° de stock RS:
- 284-785
- Référence fabricant:
- ISC16DP15LMATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
8 090,00 €
(TVA exclue)
9 790,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 1,618 € | 8 090,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-785
- Référence fabricant:
- ISC16DP15LMATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -22A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS Power Transistor | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -22A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS Power Transistor | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS Power Transistor is designed to deliver exceptional performance for a range of industrial applications. With its Advanced P channel architecture and robust construction, it ensures reliability even under demanding conditions. Boasting a breakdown voltage of 150 V, this transistor is engineered to handle significant voltages effectively. Its low on resistance helps improve efficiency, making it a valuable component in power management systems. By aligning with RoHS compliance standards, this transistor further emphasises its commitment to environmental sustainability, making it an excellent choice for forward thinking projects.
Very low on resistance for efficiency
100% avalanche tested for reliability
Logic level gate drive compatibility
Excellent thermal performance reduces heat
RoHS compliant for eco friendliness
Qualified per JEDEC standards for reliability
Compact design for adaptable configurations
Halogen free lead plating for environmental safety
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