Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- N° de stock RS:
- 284-939
- Référence fabricant:
- IQDH29NE2LM5CGATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
12 310,00 €
(TVA exclue)
14 895,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 2,462 € | 12 310,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-939
- Référence fabricant:
- IQDH29NE2LM5CGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 789A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 789A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an optimos 5 Power Transistor is engineered to deliver exceptional performance in various industrial applications. This cutting edge N channel transistor operates at a maximum voltage of 25V, offering impressive low on resistance and enhanced thermal management. Its impressive 789A continuous drain current capability allows it to perform efficiently even under rigorous conditions. Built to be reliable, it is fully qualified according to JEDEC standards ensuring longevity and endurance in everyday use.
Advanced thermal resistance for longevity
Zero gate voltage drain current minimizes energy waste
Robust avalanche energy handling for reliability
Pb free and RoHS compliant for eco friendliness
Optimized for logic level applications
Liens connexes
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