Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1

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N° de stock RS:
284-939
Référence fabricant:
IQDH29NE2LM5CGATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

789A

Maximum Drain Source Voltage Vds

25V

Package Type

PG-TTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an optimos 5 Power Transistor is engineered to deliver exceptional performance in various industrial applications. This cutting edge N channel transistor operates at a maximum voltage of 25V, offering impressive low on resistance and enhanced thermal management. Its impressive 789A continuous drain current capability allows it to perform efficiently even under rigorous conditions. Built to be reliable, it is fully qualified according to JEDEC standards ensuring longevity and endurance in everyday use.

Advanced thermal resistance for longevity

Zero gate voltage drain current minimizes energy waste

Robust avalanche energy handling for reliability

Pb free and RoHS compliant for eco friendliness

Optimized for logic level applications

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