Infineon OptiMOS Type N-Channel MOSFET, 273 A, 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1
- N° de stock RS:
- 284-934
- Référence fabricant:
- IQD020N10NM5CGATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
16 280,00 €
(TVA exclue)
19 700,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 07 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 3,256 € | 16 280,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-934
- Référence fabricant:
- IQD020N10NM5CGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor represents a significant advancement in MOSFET technology tailored for demanding industrial applications. This robust transistor is designed to deliver exceptional performance with superior thermal management, making it an Ideal choice for systems requiring efficient energy conversion and management. With a voltage rating of 100V and an impressive low on resistance, this product provides enhanced power handling capabilities while maintaining low energy losses. Its reliable performance is also backed by extensive validation, ensuring assured functionality in various operational conditions.
N channel design for efficient switching
Low on resistance minimizes power loss
Exceptional thermal resistance extends lifespan
100% avalanche tested for reliability
RoHS compliant for eco friendliness
Halogen free material for environmental standards
Reliable in high temperature environments
Liens connexes
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1