Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- N° de stock RS:
- 284-931
- Référence fabricant:
- IQD016N08NM5CGATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
13 205,00 €
(TVA exclue)
15 980,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 2,641 € | 13 205,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-931
- Référence fabricant:
- IQD016N08NM5CGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 323A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 1.57mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 323A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 1.57mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered to deliver exceptional performance with its Advanced N channel design. This robust component is ideally suited for applications where high efficiency and low on resistance are paramount. Operating at a breakdown voltage of 80V, it ensures reliable operation in demanding environments. With a superior thermal resistance profile, this power transistor stands up to the rigours of industrial applications, making it a go to solution for engineers looking to enhance energy efficiency in power management systems. Moreover, the extensive validation process guarantees adherence to the highest standards of reliability and safety, ensuring your designs are both performant and resilient.
N channel for efficient power conduction
Low on resistance minimizes power loss
Superior thermal management for longevity
100% avalanche tested for stability
Pb free and RoHS compliant
Halogen free construction for safety
JEDEC qualified for industrial applications
Liens connexes
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 80 V, 9-Pin PG-TTFN-9 IQE046N08LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 25 V, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 150 V, 9-Pin PG-TTFN-9 IQD063N15NM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 25 V, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1