Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- N° de stock RS:
- 284-944
- Référence fabricant:
- IQDH88N06LM5CGATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
12 445,00 €
(TVA exclue)
15 060,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 2,489 € | 12 445,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-944
- Référence fabricant:
- IQDH88N06LM5CGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 447A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 447A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a high performance N channel MOSFET designed to provide exceptional efficiency and reliability for industrial applications. Utilising Advanced semiconductor technology, this component delivers superior thermal management and low on resistance, making it Ideal for power conversion solutions. With its high avalanche energy rating and rigorous validation against JEDEC standards, you can Trust this product to meet stringent operational demands while maintaining safety and durability.
Optimised thermal resistance for cooling
Qualified for industrial reliability
Pb free lead plating for eco friendliness
Low gate drive requirements simplify circuits
Robust design for high drain currents
100% avalanche tested for reliability
Compact package for easy integration
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