Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- N° de stock RS:
- 284-925
- Référence fabricant:
- IQD005N04NM6CGATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
12 210,00 €
(TVA exclue)
14 775,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 2,442 € | 12 210,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-925
- Référence fabricant:
- IQD005N04NM6CGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 610A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.47mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 129nC | |
| Maximum Power Dissipation Pd | 333W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 610A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.47mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 129nC | ||
Maximum Power Dissipation Pd 333W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a TOP choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it Ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality.
Outstanding thermal resistance for reliability
Robust performance in high stress environments
100% avalanche tested for safety
Exceptional efficiency for power management
Complies with environmental regulations
Minimal switching losses for high frequency operations
Compact design reduces PCB space
Easy integration into industrial systems
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