Infineon OptiMOS Type N-Channel MOSFET, 273 A, 100 V Enhancement, 9-Pin PG-TTFN-9 IQD020N10NM5CGATMA1

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Options de conditionnement :
N° de stock RS:
284-935
Référence fabricant:
IQD020N10NM5CGATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

PG-TTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

2.05mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor represents a significant advancement in MOSFET technology tailored for demanding industrial applications. This robust transistor is designed to deliver exceptional performance with superior thermal management, making it an Ideal choice for systems requiring efficient energy conversion and management. With a voltage rating of 100V and an impressive low on resistance, this product provides enhanced power handling capabilities while maintaining low energy losses. Its reliable performance is also backed by extensive validation, ensuring assured functionality in various operational conditions.

N channel design for efficient switching

Low on resistance minimizes power loss

Exceptional thermal resistance extends lifespan

100% avalanche tested for reliability

RoHS compliant for eco friendliness

Halogen free material for environmental standards

Reliable in high temperature environments

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