Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- N° de stock RS:
- 284-926
- Référence fabricant:
- IQD005N04NM6CGATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
12,07 €
(TVA exclue)
14,604 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 6 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,035 € | 12,07 € |
| 20 - 198 | 5,435 € | 10,87 € |
| 200 - 998 | 5,01 € | 10,02 € |
| 1000 - 1998 | 4,645 € | 9,29 € |
| 2000 + | 4,165 € | 8,33 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-926
- Référence fabricant:
- IQD005N04NM6CGATMA1
- Fabricant:
- Infineon
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 610A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.47mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 129nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 610A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.47mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 129nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a TOP choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it Ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality.
Outstanding thermal resistance for reliability
Robust performance in high stress environments
100% avalanche tested for safety
Exceptional efficiency for power management
Complies with environmental regulations
Minimal switching losses for high frequency operations
Compact design reduces PCB space
Easy integration into industrial systems
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