Infineon OptiMOS N-Channel MOSFET, 637 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1
- N° de stock RS:
- 285-039
- Référence fabricant:
- IQDH45N04LM6CGATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
12,22 €
(TVA exclue)
14,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 septembre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,11 € | 12,22 € |
| 20 - 198 | 5,49 € | 10,98 € |
| 200 - 998 | 5,065 € | 10,13 € |
| 1000 - 1998 | 4,71 € | 9,42 € |
| 2000 + | 4,21 € | 8,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 285-039
- Référence fabricant:
- IQDH45N04LM6CGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 637A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-TTFN-9 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 637A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-TTFN-9 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an Advanced power transistor excels in high performance applications, delivering exceptional efficiency and reliability. Designed within the OptiMOS 6 series, it showcases impressive electrical characteristics, setting a new standard for MOSFET technology. With 100% avalanche testing, users can Trust in its robustness, whether used in power management or motor control applications. Additionally, its RoHS compliance and halogen free attributes ensure adherence to strict environmental standards, making it a smart choice for eco conscious projects.
N channel design for logic level applications
Outstanding thermal resistance for heat dissipation
Engineered for Rapid switching efficiency
Avalanche rated for reliability under stress
Pb free and RoHS compliant for eco friendliness
Halogen free construction meets safety standards
JEDEC certified for industrial performance
Liens connexes
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQE022N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH35N03LM5CGATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1