Infineon OptiMOS Type N-Channel MOSFET, 637 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1

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N° de stock RS:
285-039
Référence fabricant:
IQDH45N04LM6CGATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

637A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-TTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an Advanced power transistor excels in high performance applications, delivering exceptional efficiency and reliability. Designed within the OptiMOS 6 series, it showcases impressive electrical characteristics, setting a new standard for MOSFET technology. With 100% avalanche testing, users can Trust in its robustness, whether used in power management or motor control applications. Additionally, its RoHS compliance and halogen free attributes ensure adherence to strict environmental standards, making it a smart choice for eco conscious projects.

N channel design for logic level applications

Outstanding thermal resistance for heat dissipation

Engineered for Rapid switching efficiency

Avalanche rated for reliability under stress

Pb free and RoHS compliant for eco friendliness

Halogen free construction meets safety standards

JEDEC certified for industrial performance

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