Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

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8,02 €

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9,70 €

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le paquet*
2 - 184,01 €8,02 €
20 - 1983,61 €7,22 €
200 - 9983,33 €6,66 €
1000 - 19983,09 €6,18 €
2000 +2,77 €5,54 €

*Prix donné à titre indicatif

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N° de stock RS:
284-932
Référence fabricant:
IQD016N08NM5CGATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

323A

Maximum Drain Source Voltage Vds

80V

Package Type

PG-TTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

1.57mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

333W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

106nC

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC, RoHS, IEC61249-2-21

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered to deliver exceptional performance with its Advanced N channel design. This robust component is ideally suited for applications where high efficiency and low on resistance are paramount. Operating at a breakdown voltage of 80V, it ensures reliable operation in demanding environments. With a superior thermal resistance profile, this power transistor stands up to the rigours of industrial applications, making it a go to solution for engineers looking to enhance energy efficiency in power management systems. Moreover, the extensive validation process guarantees adherence to the highest standards of reliability and safety, ensuring your designs are both performant and resilient.

N channel for efficient power conduction

Low on resistance minimizes power loss

Superior thermal management for longevity

100% avalanche tested for stability

Pb free and RoHS compliant

Halogen free construction for safety

JEDEC qualified for industrial applications

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