Infineon MOSFET, 150 A, 1200 V AG-EASY1BS-1
- N° de stock RS:
- 258-0846
- Référence fabricant:
- FF08MR12W1MA1B11ABPSA1
- Fabricant:
- Infineon
Sous-total (1 plateau de 24 unités)*
5 968,104 €
(TVA exclue)
7 221,408 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 24 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 24 + | 248,671 € | 5 968,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0846
- Référence fabricant:
- FF08MR12W1MA1B11ABPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY1BS-1 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Forward Voltage Vf | 5.95V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY1BS-1 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Forward Voltage Vf 5.95V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon automotive CoolSiCTM EasyPACKTM1B is a half bridge module which combines the benefits of Infineon robust silicon carbide technology with a very compact and flexible package for hybrid and electric vehicles. The power module implements the new CoolSiCTM automotive MOSFET 1200V Gen1, optimized for high voltage applications like DC/DC converter and auxiliary inverter. The chipset offers benchmark current density, high block voltage and reduced switching losses, which allows compact designs and helps to improve system efficiency, as well as allows a reliable operation under harsh environmental conditions.
Intrinsic diode with low reverse recovery
Low stray inductance 5nH
Blocking voltage 1200V
Low switching losses
Integrated NTC temperature sensor
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