Infineon OptiMOS N-Channel MOSFET, 144 A, 80 V Enhancement, 8-Pin PG-WSON-8 BSC033N08NS5SCATMA1
- N° de stock RS:
- 284-641
- Référence fabricant:
- BSC033N08NS5SCATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
5 184,00 €
(TVA exclue)
6 272,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 octobre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 1,296 € | 5 184,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-641
- Référence fabricant:
- BSC033N08NS5SCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 144A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-WSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 144A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-WSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon OptiMOS Power MOSFET is precisely engineered for excellence in efficient electronic design. This Advanced power MOSFET delivers outstanding performance at 80V, Ideal for synchronous rectification in demanding applications like servers and desktop power supplies. With a dual side cooled package, it significantly reduces thermal resistance, enhancing reliability and thermal management. This product stands out with its robust avalanche tested design, ensuring durability under transient voltage conditions. Benefit from superior thermal conductivity and a Pb free construction that meets strict RoHS compliance standards, making it not only powerful but also environmentally friendly.
Dual side cooled package for thermal management
Engineered for high efficiency in synchronous rectification
100% avalanche validated for reliability
Superior thermal resistance enhances durability
Rated for performance up to 175°C
Pb free plating for environmental compliance
Halogen free standards per IEC61249 2 21
Qualified to JEDEC standards for industry
Liens connexes
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